China Electronics Technology Group Corporation's 46th Institute successfully produced my country's first 6-inch gallium oxide single crystal Powder Circle
On February 27, China Electronics Technology Group Corporation announced that China Electronics Technology Group Corporation 46th Institute has successfully produced my country's first 6-inch gallium oxide single crystal, reaching the highest international level.
Gallium oxide is a new type of ultra-wide bandgap semiconductor material with excellent physical and chemical properties. It has broad application prospects in the fields of microelectronics and optoelectronics. However, due to its high melting point, high-temperature decomposition and easy cracking, it is extremely difficult to prepare large-sized gallium oxide single crystals.
The gallium oxide team of China Electronics Technology Group Corporation 46th Institute focuses on polycrystalline surfaces, large size, high doping, and low defects. Starting from the design of large-sized gallium oxide thermal fields, it successfully constructed a thermal field structure suitable for the growth of 6-inch gallium oxide single crystals. This achievement has made a breakthrough in the 6-inch gallium oxide single crystal growth technology, has good crystallization properties, and can be used for the development of 6-inch gallium oxide single crystal substrates. It will strongly support the practical application process of gallium oxide materials in my country and the development of related industries.
China Electronics Technology Group Corporation 46th Institute is one of the earliest units in my country to engage in the research, development, and production of semiconductor materials and optical fibers. Since its establishment, it has been committed to providing high-performance and highly reliable electronic functional materials for my country's electronic information.
In recent years, China Electronics Technology Group Corporation has focused on national strategic needs, made great efforts in the field of ultra-wide bandgap semiconductor materials such as gallium oxide, aluminum nitride, and diamond, and achieved major breakthroughs and landmark results, which has strongly supported the development of my country's ultra-wide bandgap semiconductor materials.